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The release of RMFD linear Gan (GaN) power transistor series products

source:time:2019-04-27hits:6313
RMFD high linearity gallium nitride is matching power transistors (GaN UPT) specifically for new and existing communication architectures, due to these architectures will require an improved linear wide frequency performance to support the high peak to average ratio modulation waveform. RFHA3942 and RFHA3944 have a very wide tunable frequency range (to 4GHz), and provide continuous wave (CW) peak power of 65W and 35W, respectively. In addition, both can provide 15dB with high gain and high efficiency of over 55%. The is95 9.8db par signal transferred to 2.1GHz, RFHA3942 in power output 34dbm can achieve - 43dbc adjacent channel power (ACP), RFHA3944 is at the output power of 37dbm can achieve -54dBc adjacent channel power (ACP). RFHA3942 and RFHA3944 two products are in the packaging of the input and output with high terminal impedance, in a single amplifier to achieve the advantages of broadband gain and power performance. RFHA3942 and RFHA3944 adopt both ends of the ceramic flange package, which provides excellent thermal stability and conductivity through the application of RFMD advanced cooling and power technology.
RFMD power broadband services, vice president and general manager Jeff Shealy said: "RFMD is very pleased to extend our based on gallium nitride series of products to a wide range of end markets provides industry-leading linear power performance. RFMD gallium nitride series of products clearly confirms the US has always been the pursuit of technology and product leadership commitment, we hope to introduce more with great power density, high efficiency, high reliability and "green" energy consumption advantage of gallium nitride device. "
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